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| MIG75Q202H TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG75Q202H High Power Switching Applications Motor Control Applications l Integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units for over-current, realtime-current-control (RTC), under-voltage & over-temperature) in one package. l The electrodes are isolated from case. l High speed type IGBT : VCE (sat) = 3.5 V (Max) toff = 2.8 s (Max) trr = 0.21 s (Max) l Package dimensions : TOSHIBA 2-110A1A l Weight : 520g Equivalent Circuit 1 2001-05-29 MIG75Q202H Maximum Ratings (Tj = 25C ) Stage Characteristic Supply voltage Collector-emitter voltage Inverter Collector current Forward current Collector power dissipation Junction temperature Supply voltage Collector-emitter voltage Collector current Brake Reverse voltage Forward current Collector power dissipation Junction temperature Control supply voltage Control Input voltage Fault output voltage Fault output current Operating temperature Module Storage temperature range Isolation voltage Screw torque AC 1 minute M5 Condition P-N power terminal Tc = 25C, DC Tc = 25C, DC Tc = 25C P-N power terminal Tc = 25C, DC Tc = 25C, DC Tc = 25C VD-GND terminal IN-GND terminal FO-GND (L) terminal FO sink current Symbol VCC VCES IC IF PC Tj VCC VCES IC VR IF PC Tj VD VIN VFO IFO TC Tstg VISO Ratings 900 1200 75 75 400 150 900 1200 25 1200 25 140 150 20 20 20 10 -20 ~ +100 -40 ~ +125 2500 3 Unit V V A A W C V V A V A W C V V V mA C C V Nm Electrical Characteristics a. Inverter Stage Characteristic Collector cut-off current Collector-emitter saturation voltage Forward voltage Symbol ICEX Test Condition VCE = 1200V VD = 15 V, IC = 75 A VIN = 15 V 0 V IF = 75A VCC = 600 V, IC = 75 A VD = 15 V, VIN = 15 V Inductive load Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 0V (Note 1) Typ. 2.6 2.5 2.2 1.0 0.4 0.16 1.9 0.35 Max 1 10 3.5 3.0 1.7 0.8 0.21 2.6 0.6 s Unit mA VCE (sat) VF ton tc (on) V V Switching time trr toff tc (off) 2 2001-05-29 MIG75Q202H b. Brake Stage Characteristic Collector cut-off current Collector-emitter saturation voltage Reverse current Forward voltage Symbol ICEX Test Condition VCE = 1200V VD = 15 V, IC = 25 A VIN = 15 V 0 V VR = 1200 V IF = 25A VCC = 600 V, IC = 25 A VD = 15 V, VIN = 15 V Inductive load Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 0V (Note 1) Typ. 2.6 2.5 1.4 1.3 0.85 0.42 1.9 0.3 Max 1 10 3.5 1 10 2.2 1.9 1.6 0.50 2.6 0.6 s Unit mA VCE (sat) V IR VF ton tc (on) mA V Switching time trr toff tc (off) c. Control Stage (Tj = 25C) Characteristic Symbol ID (H) ID (L) VIN (on) VIN (off) IFO (on) IFO (off) OC VD = 15 V VD = 15 V VD = 15 V, IC = 75 mA Test Condition Min 1.4 2.2 5.4 105 40 SC toff (OC) OT OTr UV UVr tFO VD = 15 V VD = 15 V, Tj = 125C VD = 15 V Case temperature 150 60 110 11.0 12.0 1 Typ. 8 32 1.6 2.5 6.0 150 50 250 75 5 118 98 12.0 12.5 2 Max 12 48 1.8 2.8 6.6 0.1 125 12.5 13.0 3 A s C mA Unit mA V Control circuit current High side Low side Input-on signal voltage Input-off signal voltage Fault output current Over current protection trip level Short circuit protection trip level Protection Normal Inverter Brake Inverter Brake VD = 15 V, Tj = 125C A Over current cut-off time Over temperature protection Control supply under voltage protection Trip level Reset level Trip level Reset level V ms Fault output pulse width 3 2001-05-29 MIG75Q202H d. Thermal Resistance (Tj = 25C) Characteristic Symbol Test Condition Inverter IGBT stage Junction to case thermal resistance Rth (j-c) Inverter FRD stage Brake IGBT stage Brake FRD stage Case to fin thermal resistance Rth (c-f) Compound is applied Min Typ. 0.05 Max 0.312 1.00 0.892 2.00 C / W C / W Unit Note 1: Switching time test circuit & timing chart 4 2001-05-29 MIG75Q202H 5 2001-05-29 MIG75Q202H 6 2001-05-29 MIG75Q202H Package Dimensions: TOSHIBA 2-110A1A Unit: mm 7 2001-05-29 MIG75Q202H RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 8 2001-05-29 |
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